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 STB11NK50Z - STP11NK50ZFP STP11NK50Z
N-channel 500 V, 0.48 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET
Features
Type STB11NK50Z STP11NK50ZFP STP11NK50Z

VDSS 500 V 500 V 500 V
RDS(on) max
ID
Pw 125 W 30 W 125 W
1 2 3
< 0.52 10 A < 0.52 10 A < 0.52 10 A
3 1 2
TO-220
TO-220FP
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances
1
3
D2PAK
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Table 1.
Device summary
Marking B11NK50Z P11NK50ZFP P11NK50Z Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube
Order codes STB11NK50ZT4 STP11NK50ZFP STP11NK50Z
May 2008
Rev 6
1/16
www.st.com 16
Contents
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................. 7
3 4 5 6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value Symbol Parameter TO-220 DPAK VDS VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor VESD(G-S) dv/dt(3) VISO TJ Tstg Gate source ESD (HBM-C= 100 pF, R= 1.5 k) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature --55 to 150 10 6.3 40 125 1 4000 4.5 2500 500 30 10
(1)
Unit TO-220FP V V A A A W W/C V V/ns V C
6.3(1) 40(1) 30 0.24
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 10 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX.
Table 3.
Thermal data
Value
Symbol
Parameter
TO-220 DPAK
Unit TO-220FP 4.2 62.5 300 C/W C/W C
Rthj-case Rthj-a Tl
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
1
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting TJ = 25 C, ID=IAR, VDD = 50 V) Value 10 190 Unit A mJ
3/16
Electrical characteristics
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
2
Electrical characteristics
(TCASE = 25 C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 20 V VDS= VGS, ID = 100 A VGS= 10 V, ID= 4.5 A 3 3.75 0.48 Min. 500 1 50
10
Typ.
Max.
Unit V A A A V
4.5 0.52
Table 6.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15 V, ID = 4.5 A Min. Typ. 7.7 1390 173 42 110 49 10 25 68 Max. Unit S pF pF pF pF nC nC nC
VDS =25 V, f=1 MHz, VGS=0
Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge
VGS=0, VDS =0 to 400 V VDD=400 V, ID = 11.4 A VGS =10 V (see Figure 18)
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Test conditions VDD= 250 V, ID=5.5 A, RG= 4.7 , VGS=10 V (see Figure 19) VDD = 250 V, ID=5.5 A, RG = 4.7 , VGS=10 V (see Figure 19) VDD=400 V, ID=11.4 A, RG=4.7 , VGS=10 V (see Figure 19) Min. Typ. 14.5 18 Max. Unit ns ns
Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time
41 15 11.5 12 27
ns ns ns ns ns
Table 8.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10 A, VGS=0 ISD=10 A, di/dt = 100 A/s, VDD=45 V, Tj=150 C 308 2.4 16 Test conditions Min Typ. Max 10 40 1.6 Unit A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 9.
Symbol
Gate-source Zener diode
Parameter Test conditions Min. 30 Typ. Max. Unit V
BVGSO(1) Gate-source breakdown voltage Igs=1mA (open drain)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
5/16
Electrical characteristics
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 / DPAK Figure 3. Thermal impedance for TO-220 / DPAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
6/16
STB11NK50Z - STP11NK50ZFP - STP11NK50Z Figure 8. Transconductance Figure 9.
Electrical characteristics Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs temperature
Figure 13. Normalized on resistance vs temperature
7/16
Electrical characteristics Figure 14. Source-drain diode forward characteristics
STB11NK50Z - STP11NK50ZFP - STP11NK50Z Figure 15. Normalized BVDSS vs temperature
Figure 16. Maximum avalanche energy vs temperature
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STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Test circuit
3
Test circuit
Figure 18. Gate charge test circuit
Figure 17. Switching times test circuit for resistive load
Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
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Package mechanical data
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
11/16
Package mechanical data
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
TO-220FP mechanical data
Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7
Dia
F1
D
F
G1 H
F2
L2 L5
E
123
L4
7012510-I
12/16
G
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Package mechanical data
DPAK (TO-263) mechanical data
mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8
0079457_M
13/16
Packaging mechanical data
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
14/16
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Revision history
6
Revision history
Table 10.
Date 08-Sep-2005 14-Oct-2005 26-Mar-2006 29-Apr-2008
Revision history
Revision 3 4 5 6 Changes Complete version with curves Inserted ecopack indication New template, no content change IGSS value changed in Table 6
15/16
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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